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| 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 Symbol VCEO VCBO VEBO IC PD 625 5.0 PD PD 1.5 12 TJ, Tstg -55 to +150 Watts mW/C C 2N 3906 YWW Unit C/W C/W Y WW = Year = Work Week 250 mW mW/C mW 1 2 3 TO-92 CASE 29 STYLE 1 Value 40 40 5.0 200 Unit Vdc Vdc Vdc mAdc 2 BASE 1 EMITTER STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TA = 60C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range MARKING DIAGRAMS THERMAL CHARACTERISTICS (Note 1.) Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RJA RJC Max 200 83.3 1. Indicates Data in addition to JEDEC Requirements. ORDERING INFORMATION Device 2N3906 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906RL1 2N3906ZL1 Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Shipping 5000 Units/Box 2000/Tape & Reel 2000/Tape & Reel 2000/Ammo Pack 2000/Ammo Pack 2000/Tape & Reel 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 November, 2001 - Rev. 0 Publication Order Number: 2N3906/D 2N3906 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 2.) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 40 5.0 - - - - - 50 50 Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 2.) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 60 80 100 60 30 VCE(sat) - - VBE(sat) 0.65 - 0.85 0.95 0.25 0.4 Vdc - - 300 - - Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) fT 250 Cobo Cibo hie hre 0.1 hfe 100 hoe NF - 4.0 3.0 400 60 mmhos dB 10 - - - 2.0 - 4.5 10 12 pF pF k X 10-4 MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) td tr ts - tf - 75 225 ns - - 35 35 ns ns ns 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%. http://onsemi.com 2 2N3906 3V +9.1 V < 1 ns +0.5 V 10 k CS < 4 pF* 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 275 0 10 k 1N916 CS < 4 pF* < 1 ns 3V 275 10.6 V * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT VCC = 40 V IC/IB = 10 3.0 2.0 QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 3. Capacitance 500 300 200 100 70 50 30 20 10 7 5 500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 1.0 2.0 3.0 Figure 4. Charge Data IC/IB = 10 VCC = 40 V IB1 = IB2 IC/IB = 20 TIME (ns) tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC/IB = 10 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Fall Time http://onsemi.com 3 2N3906 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = -5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 5.0 4.0 3.0 2.0 1.0 0 0.1 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) IC = 50 mA IC = 100 mA IC = 1.0 mA IC = 0.5 mA NF, NOISE FIGURE (dB) 40 100 Figure 7. Figure 8. h PARAMETERS (VCE = -10 Vdc, f = 1.0 kHz, TA = 25C) 300 hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20 h fe , DC CURRENT GAIN 200 100 70 50 30 10 7 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 9. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0 Figure 10. Output Admittance 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio http://onsemi.com 4 2N3906 TYPICAL STATIC CHARACTERISTICS 2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +125C +25C -55C VCE = 1.0 V 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 Figure 13. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 0.6 0.4 0.2 0 0.01 IC = 1.0 mA 10 mA 30 mA 100 mA 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V q V , TEMPERATURE COEFFICIENTS (mV/ C) 1.0 0.8 V, VOLTAGE (VOLTS) 0.6 0.4 0.2 0 1.0 0.5 0 -0.5 +25C TO +125C -1.0 -1.5 -2.0 0 20 qVB FOR VBE(sat) 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 -55C TO +25C qVC FOR VCE(sat) +25C TO +125C -55C TO +25C VCE(sat) @ IC/IB = 10 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 Figure 15. "ON" Voltages Figure 16. Temperature Coefficients http://onsemi.com 5 2N3906 PACKAGE DIMENSIONS TO-92 TO-226AA CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 6 2N3906 Notes http://onsemi.com 7 2N3906 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N3906/D |
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